2N6298 Transistor Derating Guidelines


2N6298 Temperature-Power Derating [2N6299]
PNP Darlington Transistor. Package, TO-66 metal package.
2N6298 Applications; General purpose power amplifier, low frequency switching

Derate a 2N6298 transistor by 0.428 W/0C for ambient temperatures above 250C.
Maximum operational power dissipation is achievable at 250C. However above 25C the maximum package dissipation must be reduce to insure that the devices junction temperature remains constant. Decreasing the 2N6298 operational limits as temperature is increased is called derating.

The maximum operational wattage applies to still air [free air], using forced air cooling will allow the 2N6298 to operate at a higher temperature above 25C with out derating the power. Attaching the 2N6298 to a heat sink will also allow the transistor to operate at higher temperatures with out derating. Read more about a 3-Terminal TO-66 Package.

Refer to MIL-PRF-19500/540C; Semiconductor Device, Darlington Transistor, PNP, Silicon, Power, Types 2N6298 AND 2N6299, JAN, JANTX, and JANTXV, [TO-66 package].





Maximum Ratings: 2N6298, 2N6300
Collector Emitter Voltage = 60 volts dc [Vceo]
Collector Base Voltage = 60 volts dc [Vcbo]
Emitter Base Voltage = 5 volts dc [Vebo]
Collector Current = 8A [Ic]
Power Dissipation 250C = 64 Watts
Operating Junction Temperature = -65 to +2000C [Tj]
Storage Temperature = -65 to +2000C [Tstg]

Transistor Manufacturers, Heat Sink Manufacturers [Clip-on], Fan Manufacturers

Note Maximum ratings shown reflect the 2N6298, and 2N6300 [NPN version]. If the 2N6299 or 2N6301 [NPN version] is used increase Vceo and Vcbo to 80 volts.
All devices contain a built-in Base-Emitter Shunt resistor [normally 75 ohms].

Guidelines for Derating Components, Transistor Derating, PNP Transistor Derating

Diamond Package






TO-66 metal Can and Lead Identification
TO-66 Transistor


2N6298 Terminals;
Lead 1 = Emitter,
lead 2 = base [B2],
lead 3 = base [B1],
Case = collector

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Modified 1/19/12
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