2N930 Transistor Derating Curves

2N930 NPN Transistor Data

2N930 Temperature-Power Derating Curve
NPN Low Power Silicon Transistor. Package, TO-18 metal Can.
2N930 Applications; High Speed switching circuits

2N930 Temperature-Power Derating Curve
Derating a 2N930, ambient Temperature vs Power

Use the Graph to determine how much to derate power [wattage] based on ambient operational temperature.
The graph details the maximum allowable power dissipation with increasing ambient temperature for a 2N930 in a TO-18 metal can. Maximum operational power dissipation is achievable at 250C. However above 250C the maximum package power dissipation, must be reduce to insure that the devices junction temperature remains constant. At the maximum operational temperature of 2000C the allowable power dissipation falls to zero.
Note; some companies may refer to the TO-18 package as a 3TO-18, I assume to indicate that a 3-terminal TO-18 package is being used.
Derating Equation; Derate linearly 2.0 mW/0C above Ta = +250C [ambient temp]
Derating Equation; Derate linearly 4.0 mW/0C above Tc = +250C [case temp]

Refer to MIL-PRF-19500/253K; Semiconductor Device, Transistor, NPN, Silicon, Low-Power, Types 2N930 and 2N930UB, JAN, JANTX, JANTXV [TO-18, UB surface mount]
Inactive for new designs, use MIL-PRF-19500/376 [2N2484].

2N930 Maximum Operational Ratings:
Collector Emitter Voltage = 45 volts [Vec]
Collector Base Voltage = 60 volts [Vcb]
Emitter Base Voltage = 6 volts [Veb]
Collector Current = 30mA dc [Ic]
Collector-Emitter Saturation Voltage = 1vdc [VCE sat], IC = 10mAdc, IB = 0.5mAdc
Base-Emitter Saturation Voltage = 1vdc [VBE sat], IC = 10mAdc, IB = 0.5mAdc
Power Dissipation 250C = 300mW [ambient temperature]
Power Dissipation 250C = 600mW [case temperature]
Operating Temperature = -65 to +2000C [maximum]

Forward Current Transfer Ratio
hfe = 150 to 600 [IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz]
hfe = 1.5 to 6 [IC = 500 mAdc, VCE = 5.0 Vdc, f = 30 MHz]

TO-18 Lead Orientation
TO-18 Terminal Locations

TO-18 Leads:
Lead 1 = Emitter,
Lead 2 = Base,
Lead 3 = Collector
The collector is internally connected to the case [metal]

Attach a Heat Sink to the metal case
if required to allow higher temperature operation.

Transistor Manufacturers, Clip-On BJT Heat Sink Manufacturers

2N930 SMD Transistor Operation

A surface mount version of the 2N930 is also called in the specification and shown to the left [2N930UB]. However this particular package version does not seem to be used that often.

The slash sheet [/253] is inactive for new designs. Note I can't tell if the surface mount version referenced here is still in production. But the metal can version is still being produced. However only legacy military designs have the opportunity to use the device, newer designs would have to use the replacement part. Commercial designs are not effected by a department of defense document being withdrawn, this only relates to government programs that are required to use approved parts tested to military standards.

In regards to component derating, the surface mount version will dissipate slightly more power than the metal can version. The two preferred operating curves [gray] begin at different power ratings; The lowest curve begins at 260mW and falls linearly to 120C. The next higher curve starts at 310mW and falls to 125C in a straight line. The maximum junction temperature line begins at 360mW and begins to fall at 85C down to 200C in a straight line.

TO-18 Package
TO-18 Transistor Package

Derating Curve NPN Transistors
Transistor Derating Curves

Component Derating
Thermal Compounds
Transistor Sockets

Transistor Terms
BJT Circuit Configurations

Temperature derating is standard design
practice in both Commercial and Military
circuits and systems.

The 2N930 is still in production.
Available from a number of suppliers.
Component cost depends on quantity.

UB Surface Mount Package Drawing
2N930 Surface Mount Version

2N930-UB Absolute Maximum Ratings:
Collector Emitter Voltage = 45 volts
Power Dissipation 250C = 300mW
Operating Temperature = -55 to +2000C

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Modified 1/21/12
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