2N930 Temperature-Power Derating Curve
NPN Low Power Silicon Transistor. Package, TO-18 Metal Can.
2N930 Applications; High Speed switching circuits
Derating a 2N930, ambient Temperature vs Power
Use the Graph to determine how much to derate power [wattage] based on ambient operational temperature.
The graph details the maximum allowable power dissipation with increasing ambient temperature for a 2N930 in a TO-18 metal can. Maximum operational power dissipation is achievable at 250C. However above 250C the maximum package power dissipation, must be reduce to insure that the devices junction temperature remains constant. At the maximum operational temperature of 2000C the allowable power dissipation falls to zero.
Derating Equation; Derate linearly 2.0 mW/0C above Ta = +250C [ambient temp]
Derating Equation; Derate linearly 4.0 mW/0C above Tc = +250C [case temp]
Refer to MIL-PRF-19500/253K; Semiconductor Device, Transistor, NPN, Silicon, Low-Power,
Types 2N930 and 2N930UB, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC [TO-18, UB surface mount]
Inactive for new designs, use MIL-PRF-19500/376 [2N2484].
2N930 Maximum Operational Ratings:
Collector Emitter Voltage = 45 volts [Vec]
Collector Base Voltage = 60 volts [Vcb]
Emitter Base Voltage = 6 volts [Veb]
Collector Current = 30mA dc [Ic]
Power Dissipation 250C = 300mW
Operating Temperature = -65 to +2000C [maximum]
Transistor Manufacturers, Clip-On BJT Heat Sink Manufacturers
TO-18 Terminal Locations
TO-18 Leads: Lead 1 = Emitter, Lead 2 = Base, Lead 3 = Collector
The collector is internally connected to the case [metal]
Attach a Heat Sink to the metal case if required to allow higher temperature operation.
