2N6676T3 Temperature-Power Derating Curve
NPN High Power Transistor. Package, TO-257AA.
2N6676T3 Applications; High power switching, power amplifier
There is no derating curve for this device, it was removed
The chart indicates the maximum power dissipation with increasing ambient temperature. Maximum operational power dissipation is achievable at 25C. However above 25C the maximum package dissipation, or power used, must be reduce to insure that the devices junction temperature remains constant. The higher the ambient temperature is increased the lower the allowable power dissipation, as depicted in the curves.
Derating is the method of decreasing a devices operational limits as temperature is increased, in this case derating a devices operational power dissipation vs increasing ambient temperature. This particular graph depicts the derating of a 2N6676T3 and 2N6678T3 transistor in a TO-257AA package. Transistor Derating Curves.
Refer to MIL-PRF-19500/538D; Semiconductor Device, Transistor, NPN, Silicon, Power, Types 2N6676, 2N6678, 2N6676T3 [TO-257AA], 2N6678T3 [TO-257AA], 2N6676T3, 2N6678T3, 2N6691, and 2N6693, JAN, JANTX, JANTXV, and JANS, [TO-257AA]
Maximum Operation Ratings [2N6676T3]:
Collector Emitter Voltage = 300 volts dc
Emitter Base Voltage = 8.0 volts dc
Power Dissipation 250C = 175 Watts
Operating Temperature = -65 to +2000C
Storage Temperature = -65 to +2000C
Pinout note; Terminal 1 Base, Terminal 2 Collector, Terminal 3 Emitter.
Related Devices: [which differ by package type]
2N6676 Derating Curve, 2N6691 Derating Curve, 2N6676T1 Derating Curve
How to Derate;
Derating Components Guide lines
Related topics;
Transistor Manufacturers and BJT vendors
Electronic Engineering Key Words:
Transistor, Component Derating, reliability,
Thermal,
Derate, Semiconductor, 2N6676T3,
Standard,
Rated Temp, Temperature, TO-257
2N6678T3,
How To, Guideline, NPN, MIL, Design
Specification, Failure, Qualified.
