2N6676T1 Temperature-Power Derating Curve
NPN High Power Transistor. Package, TO-254AA.
2N6676T1 Applications; High power switching, power amplifier
2N6676T1 Temperature Derating Curve
The chart indicates the maximum power dissipation with increasing case temperature. Maximum operational power dissipation is achievable at 250C. However above 25C the maximum package dissipation, or power, must be reduce to insure that the devices junction temperature remains constant. The higher the ambient temperature is increased the lower the allowable power dissipation, as depicted in the curves.
Derating is the method of decreasing a devices operational limits as temperature is increased, in this case derating a devices operational power dissipation vs increasing ambient temperature. This particular graph depicts the derating of a 2N6676T1 and 2N6678T1 transistor in a TO-254AA package.
Refer to MIL-PRF-19500/538D; Semiconductor Device, Transistor, NPN, Silicon, Power, Types 2N6676, 2N6678, 2N6676T1, 2N6678T1, 2N6676T3, 2N6678T3, 2N6691, and 2N6693, JAN, JANTX, JANTXV, and JANS, [TO-254AA]
2N6676T1 Maximum Operation Ratings:
Collector Emitter Voltage = 300 volts dc
Collector Base Voltage = 450 volts dc
Emitter Base Voltage = 8.0 volts dc
Base Current = 5A dc
Collector Current = 15A dc
Power Dissipation 250C = 175 Watts
Operating Temperature = -65 to +2000C
Storage Temperature = -65 to +2000C
Pinout note; Terminal 1 Base, Terminal 2 Collector, Terminal 3 Emitter.
All terminals [or leads] are isolated from the case, or tab.
The TO-254 is a through-hole package.
The tab may be bolted to a metal case or a physical heat sink.
For additional operating characteristics refer to the vendor data sheet.
Definitions related to Derating are provided on the main Transistor Derating page.
