2N6676 Temperature-Power Derating Curve
NPN High Power Transistor. Package, TO-3.
2N6676 Applications; High power switching, power amplifier
2N6676 Temperature Derating Curve, Case Temperature
The chart indicates the maximum power dissipation with increasing ambient temperature for a 2N6676. Maximum operational power dissipation is achievable at 25C. However above 25C the maximum package dissipation, or power, must be reduce to insure that the devices junction temperature remains constant. The higher the ambient temperature is increased the lower the allowable 2N6676 power dissipation, as depicted in the curves. Note that this curve relates to Case Temperature [Tc].
Derating is the method of decreasing a devices operational limits as temperature is increased, in this case derating a devices operational power dissipation vs increasing ambient temperature. This particular graph depicts the derating of a 2N6676 and 2N6678 transistor in a TO-3 package. Attaching the TO-3 metal package to a heat sink will allow the device to operate at a higher temperature than depicted in the curve. The collector of the transistor is connected to the case.
Refer to MIL-PRF-19500/538D; Semiconductor Device, Transistor, NPN, Silicon, Power, Types 2N6676 [TO-3], 2N6678 [TO-3], 2N6676T1, 2N6678T1, 2N6676T3, 2N6678T3, 2N6691, and 2N6693, JAN, JANTX, JANTXV, and JANS, [TO-3]
2N6676 Maximum Operation Ratings:
Collector Emitter Voltage = 300 volts dc
Emitter Base Voltage = 8.0 volts dc
Power Dissipation 250C = 175 Watts
Operating Temperature = -65 to +2000C
Storage Temperature = -65 to +2000C
Pinout note; Terminal 1 Emitter, Terminal 2 Base, Case Collector.
Related Devices:
2N6691 Derating Curve, 2N6676T1 Derating Curve, 2N6676T3 Derating Curve
