2N5339 Transistor Derating Curves

2N5339 NPN Transistor

2N5339 Temperature-Power Derating Curve
NPN Switching Silicon Transistor. Package, TO-39 metal Can.
2N5339 Applications; General Purpose low power Amplifier, Switching Transistor

2N5339 Temperature-Power Derating Curve in a TO-39 Package
Air Temperature Derating Curve for 2N5339 Transistor

The graph shows the maximum DC power dissipation with increasing ambient temperature [Ta] for a 2N5339 in a TO-39 metal can. A derating curve for the 2N5339 in a TO-276 Surface Mount Package [SMD05] is not shown. Maximum operational power dissipation is achievable only at 250C [Still-Air]. Above 25C the maximum package dissipation must be reduced to insure that the devices junction temperature remains constant. The higher the ambient temperature is increased the lower the allowable DC power dissipation, as depicted in the curves, or this equation; derate 5.71mW/0C above 250C.

Decreasing a devices operational limits as temperature is increased is called derating, in this case derating a devices operational power dissipation vs increasing ambient temperature. Above room temperature the device must be derated by 4.6mW/0C. For reference a derating graph for case temperature is shown below.

Attaching a heat sink to the 2N5339 device will allow higher temperature operation with out the need to derate or reduce the power consumption [as much].

Implementing forced air into the design will also allow the 2N5339 transistor to operate at higher temperatures with higher power dissipation rates. The derating curve is for Free-Air and does not account for system operation with a fan. However, because the curve implies free-Air it also does not account for the device placed within an enclosure or chassis which inhibits air flow.

Refer to MIL-PRF-19500/560; Silicon Semiconductor Device, NPN Switching Transistor, Types; 2N5339 [TO-39] and 2N5339U3 [TO-276AA], JAN, JANTX, JANS, JANHC, & JANKC.
Screening, processing and qualified per MIL-PRF-19500.

2N5339 Maximum Ratings:
Collector Emitter Voltage = 100 volts dc [Vceo]
Collector Base Voltage = 100 volts dc [Vcbo]
Emitter Base Voltage = 6.0 volts dc [Vebo]
Collector Current = 5.0 amps dc [Ic]
Base Current = 1.0 amp dc [Ib]
Power Dissipation 250C = 1.0 watt
Gain = 60 minimum [hfe]
Operating Junction Temperature = -65 to +2000C [Tj]
Design Hint; Keep in mind the 2N5339 may not dissipate power at 200 degrees C
Storage Temperature = -65 to +2000C [Tstg]

2N5335 TO-39 Package Case Temperature Derating Graph
TO-39 Case Derating Curves

2N5339 Derating Definitions
Ambient temperature. is the air temperature measured below a semiconductor device, in an environment of substantially uniform temperature, cooled only by natural air convection [Free-Air], and not materially affected by reflective and radiant surfaces. Also note that the 2N5339 curves apply to sea level.
Temperature coefficient. The ratio of the change in a parameter to the change in temperature.
Thermal resistance. Thermal resistance is the temperature rise, per unit power dissipation, of a junction above the temperature of a stated external reference point under conditions of thermal equilibrium. Thermal Impedance of a Transistor is also provided for Junction-to-Case and Junction-to-Ambient.
Storage temperature. [Tstg] is a temperature at which the device may be stored without any power being applied.

TO-39 Package
TO-39 metal Can Package

metal Transistor Can with pin location and Identifications
TO-39 metal Can

1-Emitter, 2-Base, 3-Collector

Component Distributors
Transistor Manufacturers
Heat Sink Manufacturers
Fan Manufacturers

Derating Guidelines
Component Derating
Transistor Derating Curves
NPN Transistor Derating Curves

Component Packages
TO-39 Through-hole
TO-276 Surface Mount

2N5339 Switching Test Circuit
2N5339 Test Circuit

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Modified 6/13/15
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