2N5003 Temperature-Power Derating Curve
PNP High Power Transistor. Package, TO-59.
2N5003 Applications; High power switching, power amplifier
Wide band amplifier applications
Complementary to a 2N5002 and 2N5004 transistor.
2N5003 Temperature-Power Derating Curve
The chart indicates the maximum power dissipation with increasing case temperature. Maximum operational power dissipation is achievable at 250C. However above 25C the maximum package dissipation, or power, must be reduce to insure that the devices junction temperature remains constant. The higher the ambient temperature is increased the lower the allowable power dissipation, as depicted in the curves.
This particular graph depicts the derating of a 2N5002 transistor in a TO-59 package. Consider incorporating forced air cooling or attaching the device to a metal heat sink to increase the operational range.
2N5003 Case Derating Equation; 331mW/0C above 250C.
2N5003 Ambient air Derating Equation; 331mW/0C above 250C.
Refer to MIL-PRF-19500/535; Semiconductor Device, Transistor, PNP, Silicon, Power, Types 2N5003 and 2N5005, JAN, JANTX, JANS, JANHC, and JANKC, [TO-59, T6-C]
2N5003 Maximum Operation Ratings:
Collector Emitter Voltage = 80 volts dc [Vceo]
Emitter Base Voltage = 5.5 volts dc [Vebo]
Collector Base Voltage = 100 volts dc [Vcbo]
Collector Current = 5.0 Amps dc [Ic]
Power Dissipation = 58 Watts [Case Temperature 250C]
Power Dissipation = 2 Watts [Ambient Temperature 250C]
Operating Junction Temperature = -65 to +2000C [Tj]
Storage Temperature = -65 to +2000C [Tstg]
2N5003 Signal Assignments;
Terminal 1 Emitter, Terminal 2 Base, Terminal 3 Collector.
The Collector is isolated from the case of the device.
Complementary BJT to a 2N5002 and 2N5004 device [How to derate a 2N5002 BJT]
Derating is the method of decreasing a devices operational limits as temperature is increased, in this case derating a devices operational power dissipation vs increasing ambient temperature.
Ambient temperature. is the air temperature measured below a semiconductor device,
in an environment of substantially uniform temperature [Still-Air], cooled only by natural air convection [Free-Air], and not materially
affected by reflective and radiant surfaces. Near-by devices that may induce heat onto this device is not accounted for in any derating curve.
Case mount. A type of package which provides a method of readily attaching one surface of the
semiconductor device to a heat sink [heat dissipater] to achieve thermal management of the case temperature. Attaching a device to a heat sink greatly reduces the requirement to derate the device over temperature. The 2N5003 is a case mount package which could be bolted to a metal panel, a Conductive Adhesive Compound will greatly effect heat conduction. Design note; because the stud or case is isolated from the terminals there is no need for an Electrically Conductive Adhesive Compound.
Case temperature. is that temperature measured at a specified point on the case of a
semiconductor device. Some Temperature-Power derating curves show maximum power by ambient temperature [Ta] while some show maximum power by case temperature [Tc], the two curves are entirely different. Note that the curve above shows the maximum 2N5003 case temperature.
Stud Mount. Same as Bolt Mount, See case mount.
Temperature coefficient. The ratio of the change in a parameter to the change in temperature.
Thermal resistance. Thermal resistance is the temperature rise, per unit power dissipation, of a junction
above the temperature of a stated external reference point under conditions of thermal equilibrium. Check the derating curves for Thermal resistance.
2N5003 Switching Time Test Circuit
The 2N5003 is a PNP Power Transistor.
Power dissipation up to 58 Watts at a case temperature of 25C
Collector current [Ic] is 5 amps DC
2N5003 Switching Time Circuit
Schematic Notes:
1. Vgen is a -30 pulse (from 0 V) into a 50 ohm termination [0V to - 30 volts].
2. The Vgen waveform is supplied by a generator with the following characteristics:
tr = 15 ns, tf = 15 ns, Zout = 50 ohm, duty cycle = 2 percent.
3. Waveforms are monitored on an oscilloscope with the following characteristics:
tr = 1 ns, Rin = 10M ohm, CIN = 11.5 pF.
4. Resistors shall be noninductive types.
5. The dc power supplies may require additional bypassing in order to minimize ringing.
6. An equivalent drive circuit may be used.
The TUT [Transistor Under Test] is the 2N5003.
As with many of these test schematics a 1N914 switching diode is used.
The 2N6128 is an NPN Transistor
