2N5002 Temperature-Power Derating Curve
NPN High Power Transistor. Package, TO-59.
2N5002 Applications; High power switching, power amplifier
Wide band amplifier applications
Complementary to a 2N5003 and 2N5005 transistor.
2N5002 Temperature Derating Curve
The chart indicates the maximum power dissipation with increasing case temperature. Maximum operational power dissipation is achievable at 25C. However above 25C the maximum package dissipation, or power, must be reduce to insure that the devices junction temperature remains constant. The higher the ambient temperature is increased the lower the allowable power dissipation, as depicted in the curves.
Derating is the method of decreasing a devices operational limits as temperature is increased, in this case derating a devices operational power dissipation vs increasing case temperature. This particular graph depicts the derating of a 2N5002 transistor in a TO-59 metal package. Transistor Derating Curves.
Refer to MIL-PRF-19500/534F; Semiconductor Device, Transistor, NPN, Silicon, Power, Types 2N5002 and 2N5004, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCB, JANKCB, JANKCBM, JANKCBD, JANKCBP, JANKCBL, JANKCBR, JANKCBF, JANKCBG, and JANKCBH, [TO-59]
Inactive for new designs, use MIL-PRF-19500/613, A 2N7373 in a TO-254 package.
2N5002 Maximum Operation Ratings:
Collector Emitter Voltage = 80 volts dc
Emitter Base Voltage = 5.5 volts dc
Power Dissipation 250C = 58 Watts
Operating Temperature = -65 to +2000C
Storage Temperature = -65 to +2000C
Refer to the 2N5002 data sheet for additional data
Pinout note; Terminal 1 Emitter, Terminal 2 Base, Terminal 3 Collector.
Complementary BJT to a 2N5002 and 2N5004 device [How to derate a 2N5003 BJT or 2N5005]
