2N3846T1 Temperature-Power Derating Curve [2N3847T1]
NPN Power Switching Silicon Transistor. Package, TO-254AA.
Transistor Operational Power Derating Curve
Use the Curves to determine maximum operational power based on ambient temperature, derate power as required. The tab may be attached to a heat sink to increase operation above what the curves indicate. Transistor Derating Curves
Temperature derating is a standard design practice for electrical engineers.
Refer to MIL-PRF-19500/412D; Semiconductor Device, Transistor, NPN, Silicon, Power, Types: 2N3846, 2N3846T1, 2N3846T3, 2N3847, 2N3847T1, and 2N3847T3, JAN, JANTX, JANTXV, and JANS, [TO-254AA]
Maximum Operational Ratings:
Collector Emitter Voltage = 200 volts dc
Collector Base Voltage = 300 volts dc
Emitter Base Voltage = 10 volts dc
Power Dissipation 250C = 4 Watts
Operating Temperature = -65 to +2000C
Storage Temperature = -65 to +2000C
Listing of Transistor Manufacturers, [BJT Vendors]
Transistor Pin Out; Pin 1 Base, Pin 2 Collector, Pin 3 Emitter.
All terminals are isolated from case.
Attach a Heat SInk for enhanced thermal performance. If required use a Thermal Adhesive.
How to Derate; Guideline for Derating Electronic Components
Refer to; MIL-PRF-19500; Semiconductor Devices, General Specification
