2N3765 Temperature-Power Derating Curve [2N3763, 2N3764, 2N3765]
PNP Silicon Switching Transistor. Package, TO-39 Metal Can [Through-Hole].
2N3765 Transistor Operational Power Derating Curve
Use the graph above to determine the maximum power dissipation for the 2N3765 based on operational case temperature [Tc]. Attach a heat sink to increase operating temperature with out the requirement to derate the device. The graph applies to case temperature in free air [still air] with no adjacent heat generating components. Use forced air [Fan Manufacturers] to increase the operating range of the 2N3765.
Additional Transistor Derating Curves, PNP Transistor Derating Graphs
Temperature derating is a standard design practice for electrical engineers.
An alternate derating method; Derate linearly at 2.86 mW/0C for TA > +250C
Refer to MIL-PRF-19500/396K; Semiconductor Device, Transistor, PNP, Silicon, Switching, Types 2N3762, 2N3762L, 2N3762U4, 2N3762UA, 2N3763, 2N3763L, 2N3763U4, 2N3763UA, 2N3764, and 2N3765, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH JANHCA, JANKCA, JANKCAM, JANKCAD, JANKCAP, JANKCAL, JANKCAR, JANKCAF, JANKCAG, and JANKCAH, [TO-5, TO-39, TO-46, U4/UA surface mount]
2N3765 Maximum Operational Ratings: [Ta = 250C]
Collector Emitter Voltage = 60 volts dc Vceo]
Collector Base Voltage = 60 volts dc [Vcbo]
Emitter Base Voltage = 5 volts dc [Vebo]
Collector Current = 1.5 amps dc [Ic]
Power Dissipation 250C = 500 mWatt [Pt]
Operating Temperature = -65 to +2000C [Tj]
Storage Temperature = -65 to +2000C [Tstg]
Listing of Transistor Manufacturers and BJT vendors.
How to Derate; Guidelines to Derating Electronic Components
UA Case Package, SMD
