2N3739 Transistor Derating Curves


2N3739 Temperature-Power Derating Curve
NPN Silicon Power Transistor. Package, TO-66 metal Can.
2N3739 Applications;

2N3739 Temperature-Power Derating Curve
2N3739 Transistor Operational DC Power Derating Curve

Use the Graph to determine how much to derate power [wattage] based on operating case temperature. To function above the curves attach the TO-66 metal can to a heat sink. Refer to Transistor Derating Curves for other BJT types and derating definitions.
Temperature derating is a standard design practice for electrical engineers, but the chart should only be used as a guideline or recommendation. Note, many data sheets use ambient temperature while the graph relates to case temperature [Tc].
Use thermal grease and or a metal washer to enhance heat conduction. Data Sheet Equation; Derate linearly 0.114 W/0C for Tc above 250C

Refer to MIL-PRF-19500/402; Semiconductor Device, Transistor, NPN, Silicon, Power, Type 2N3739, JAN, JANTX, and JANTXV, [TO-66], similar case style TO-213AA.





2N3739 Maximum Ratings:
Collector Emitter Voltage = 300 volts dc [VCEO]
Collector Base Voltage = 325 volts dc [VCBO]
Emitter Base Voltage = 6 volts dc [VEBO]
Base Current = 0.5 amps dc [IB]
Collector Current = 1.0 amps dc [IC]
Power Dissipation = 20 Watt [Case; 250C]
Operating Temperature TJ= -55 to +2000C
Storage Temperature TSTG= -55 to +2000C

TO-66 Pin Out: Lead 1 = Emitter, lead 2 = Base, Case = Collector.




TO-66 Transistor Package
TO-66 metal Can


Related Vendors;
Transistor Manufacturers

Related Data:
Unit Test Acronyms
DUT Definition

Component Derating Guide

MIL-PRF-19500;
Semiconductor Devices, General Spec.

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Modified 1/15/12
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