2N3739 Temperature-Power Derating Curve
NPN Silicon Power Transistor. Package, TO-66 Metal Can.
2N3739 Applications;
2N3739 Transistor Operational Power Derating Curve
Use the Graph to determine how much to derate power [wattage] based on operational case temperature. To function above the curves attach the TO-66 metal can to a heat sink. Refer to Transistor Derating Curves for other BJT types and derating definitions.
Temperature derating is a standard design practice for electrical engineers, but the chart should only be used as a guideline or recommendation. Note, many data sheets use ambient temperature while the graph relates to case temperature [Tc].
Data Sheet Equation; Derate linearly 0.114 W/0C for Tc above 250C
Refer to MIL-PRF-19500/402E; Semiconductor Device, Transistor, NPN, Silicon, Power, Type 2N3739, JAN, JANTX, and JANTXV, [TO-66], similar case style TO-213AA.
2N3739 Maximum Ratings:
Collector Emitter Voltage = 300 volts dc [VCEO]
Collector Base Voltage = 325 volts dc [VCBO]
Emitter Base Voltage = 6 volts dc [VEBO]
Base Current = 0.5 amps dc [IB]
Collector Current = 1.0 amps dc [IC]
Power Dissipation = 20 Watt [Case; 250C]
Operating Temperature TJ= -55 to +2000C
Storage Temperature TSTG= -55 to +2000C
TO-66 Pin Out: Lead 1 = Emitter, lead 2 = Base, Case = Collector.
How to Derate; Guideline for Derating Electronic Components
Refer to; MIL-PRF-19500; Semiconductor Devices, General Specification
