2N3715 Temperature-Power Derating Curves
NPN High-Power Transistor. Package, TO-3 Metal Can.
2N3715 Applications; Medium speed switching and amplifier circuits
2N3715 Transistor Operational Power Derating Curve
The chart gives the maximum allowable package power dissipation with increasing temperature. Maximum operational power dissipation is achievable at 25C. However above 25C the maximum package dissipation, must be reduce to insure that the devices junction temperature remains constant. The higher the ambient temperature is increased the lower the allowable power dissipation, as shown in the curves.
Decreasing a devices operational limits as temperature is increased is called derating, in this case derating a devices operational power dissipation vs increasing ambient temperature. Derate linearly 28.57mW/0C for an ambient temperature above 250C with still air. Apply forced air to the system to increase the operational temperature range.
Transistor Derating Curves [by device number], with terms and definitions.
Refer to MIL-PRF-19500/408J; Semiconductor Device, Transistor, NPN, Silicon, High-Power, Types 2N3715 and 2N3716, JAN, JANTX, JANTXV, and JANS, [TO-3]
-------2N3715 Maximum Operational Ratings:
VCEO Collector Emitter Voltage = 60 volts dc [2N3715]
VCEO Collector Emitter Voltage = 80 volts dc [2N3716]
VCBO Collector Base Voltage = 80 volts dc [2N3715]
VCBO Collector Base Voltage = 100 volts dc [2N3716]
VEBO Emitter Base Voltage = 7 volts dc [2N3715, 2N3716]
IB Base Current = 4A dc [2N3715, 2N3716]
IC Current Current = 10A dc [2N3715, 2N3716]
Power Dissipation 250C = 5 Watts [2N3715, 2N3716]
Operating Temperature = -65 to +2000C
Storage Temperature = -65 to +2000C
TO-3 Pin Out: Lead 1 = emitter, lead 2 = base, lead 3 = collector.
The collector is electrically connected to the case.
Refer to; MIL-PRF-19500; Semiconductor Devices, General Specification
