2N3634 Transistor Derating Curve

2N3634 Temperature-Power Derating Curve [2N3635, 2N3636, 2N3637]
PNP High Voltage Transistor. Package, TO-39, & TO-5 metal Can.
2N3634 Applications -

Temperature derating curve for a 2N3634 PNP Transistor in ambient air
2N3634 Transistor Temperature-Power Derating Curve

The above chart details the maximum allowable power dissipation with increasing ambient temperature. Maximum operational power dissipation is achievable at 25C. However above 25C the maximum package dissipation, or power, must be reduce to insure that the devices junction temperature remains constant. The higher the ambient temperature is increased the lower the allowable power dissipation, as depicted in the curves.

Decreasing a devices operational limits as temperature is increased is called derating, in this case derating a devices operational power dissipation vs increasing ambient [surrounding] temperature. This particular graph depicts the derating of a 2N3634 transistor in a TO-39 package. Additional Transistor Derating Curves for other devices [PNP devices].
Temperature derating is a common practice with transistor circuit design.

Refer to MIL-PRF-19500/357; Semiconductor Device, Transistor, PNP, Silicon, Amplifier, Types 2N3634 through 2N3637, 2N3634UB through 2N3637UB, 2N3634L through 2N3637L, are all JAN qualified components in either a TO-39, or TO-5 package.

2N3634 Maximum Ratings:
Collector Emitter Voltage = 140 volts dc
Collector Base Voltage = 140 volts dc
Emitter Base Voltage = 5 volts dc
Collector Current = 1 amp dc
Power Dissipation 250C = 1 Watt
Operating Temperature = -65 to +2000C
Storage Temperature = -65 to +2000C

Maximum Safe Operating-Area

The maximum safe operating area of a transistor is the area bounded by the curve of the maximum applied voltage and maximum current requirements of the component, which defines the power dissipation of the device. Ultimately the maximum permissible junction temperature of the transistor defines the maximum possible power dissipation; however the maximum safe operating area graph depicts the maximum junction temperature as current by voltage. Note that the maximum safe operating area of a device is also effected by the duration of applied voltage, as shown in the graph using different color lines.

Maximum Safe Operating area for a 2N3637 transistor for different pulse times

TO-39 2N3637 Maximum Safe Operating Area at 25C

The Safe Operating Area [SOA] is limited to a junction temperature [Tj] of 200C for a safe design. The graph covers continuous dc operation to 1uS pulses [1uS, 10, 100, 1mS, 10 100, and DC to 1000mS]. A number of points are located on the graph for reference.
Vce = 5V at 1A [Vce = Collector to Emitter voltage]
Vce = 50V at 0.095A
Vce = 100V at 0.03A
Vce = 130V at 0.02A

Data sheet warning;
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under the Electrical Characteristics is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. Listing of Transistor Manufacturers

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Package outline drawing and pin identification of a TO-39 transistor package
TO-39 Transistor Package

Package outline drawing for a TO-5 transistor package
TO-5 Transistor Package

Engineering terminology:
Transistor series reliability,
2N3634 Semiconductor Temperature

Department of Defense Specifications:
Semiconductor Devices, General Specification

Department of Defense Standards:
Test Methods for Semiconductor Devices

Derating Recommendations;
How to Derate Electronic Components

PC motherboard

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Modified 6/13/15
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