2N3498 Temperature-Power Derating Curve [2N3499, 2N3500, 2N3501]
NPN Switching Silicon Transistor. Package, TO-39, TO-5 Metal Can.
2N3498 Applications; General purpose switching and amplifiers in high voltage circuits
2N3498 Transistor Derating Curve
The chart details the maximum allowable power dissipation with increasing ambient temperature. Maximum operational power dissipation is achievable at 25C. However above 25C the maximum package dissipation, or power, must be reduce to insure that the devices junction temperature remains constant. The higher the ambient temperature is increased the lower the allowable power dissipation, as depicted in the curves. The maximum allowable junction temperature is +2000C, or the point at which the device may not dissipate any additional power.
Transistor Derating Curves
Temperature derating is a standard design practice for electrical engineers.
Refer to MIL-PRF-19500/366M; Semiconductor Device, Transistor, NPN, Silicon, Amplifier, Types 2N3498, 2N3498L, 2N3498U4, 2N3499, 2N3499L, 2N3499U4, 2N3500, 2N3500L, 2N3500U4, 2N3501, 2N3501L, 2N3501UB, and 2N3501U4, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCB, JANHCC, JANKCB, JANKCC, JANKCCM, JANKCCD, JANKCCP, JANKCCL, JANKCCR, JANKCCF, JANKCCG, and, JANKCCH, [TO-39, TO-5]
2N3498 Maximum Ratings, Ta = 250C:
Collector Emitter Voltage = 100 volts dc
Collector Base Voltage = 100 volts dc
Emitter Base Voltage = 6 volts dc
Collector Current = 500mA dc
Power Dissipation 250C = 1 Watt
Operating Temperature = -65 to +2000C
Storage Temperature = -65 to +2000C
Listing of Transistor Manufacturers
How to Derate; Derating Guidelines for Electronic Components
Department of Defense Specifications:
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
Department of Defense Standards:
MIL-STD-750 - Test Methods for Semiconductor Devices.
