2N3467 Temperature-Power Derating Curve [2N3468]
PNP Switching Silicon Transistor. Package, TO-39, TO-5 metal Can.
2N3467 Transistor Power-Temperature Derating Curve
The chart details the maximum allowable power dissipation with increasing ambient temperature. Maximum operational power dissipation is achievable at 25C. However above 25C the maximum package dissipation, or power, must be reduce to insure that the devices junction temperature remains constant. The higher the ambient temperature is increased the lower the allowable power dissipation, as depicted in the curves. Decreasing a devices operational limits as temperature is increased is called derating, in this case derating a devices operational power dissipation vs increasing ambient temperature. This particular graph depicts the derating of a 2N3467 transistor in a TO-39 package.
Additional Transistor Derating Curves for other devices [PNP devices].
Temperature derating is a common practice with transistor circuit design.
Refer to MIL-PRF-19500/348; Semiconductor Device, Transistor, PNP, Silicon, Switching, Types 2N3467, 2N3467L, 2N3468, 2N3468L, JAN qualified, [TO-39, TO-5]
2N3467 Maximum Ratings:
Collector Emitter Voltage = 40 volts
Collector Base Voltage = 40 volts
Emitter Base Voltage = 5.0 volts dc
Power Dissipation 250C = 1Watt
Operating Temperature = -55 to +2000C
Manufacturers of Transistors or vendors, Manufacturers of Heat Sinks
Department of Defense Specifications:
MIL-PRF-19500; Semiconductor Devices, General Specification
Department of Defense Standards:
MIL-STD-750; Test Methods for Semiconductor Devices
How to Derate; Guideline for Derating Electronic Devices
Refer to the vendors data sheet for additional data.
