2N3439 Transistor Derating Curves


2N3439 Temperature-Power Derating Curve [2N3440]
NPN Low Power Transistor. Package, TO-39.
2N3439 Applications; High Voltage & High Power Amplifiers

2N3439 Temperature-Power Derating Curve
2N3439 Temperature-Power Derating Curve

Use the Graph to determine power dissipation based on operational ambient temperature. Attaching a heat sink to the metal can will allow the device to operate at a higher temperature with out the need to reduce power consumption. Transistor Derating Curves
Temperature derating is a standard design practice for electrical engineers.

Refer to MIL-PRF-19500/368; Semiconductor Device, Transistor, NPN, Silicon, Low-Power Types: 2N3439, 2N3439L, 2N3439UA, 2N3439U4, 2N3440, 2N3440L, 2N3440UA, and 2N3440U4, JAN rated parts, [TO-39 & TO-5 leaded metal cans]





2N3439 Maximum Ratings:
Collector Emitter Voltage = 350 volts dc [Vceo]
Collector Base Voltage = 450 volts dc [Vcbo]
Emitter Base Voltage = 7 volts dc [Vebo]
Power Dissipation = 0.8 Watt [250C ambient temperature]
Power Dissipation = 5.0 Watt [250C case temperature]
Operating Junction Temperature = -65 to +2000C [Tj]
Storage Temperature = -65 to +2000C [Tstg]





TO-39 metal Package
TO-39 metal Can Transistor

Pins; Lead 1 Emitter, 2 Base, 3 Collector




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