2N2906AUB Transistor Derating Curves

2N2906AUB Temperature-Power Derating Curve [2N2907AUB]
PNP General Purpose Silicon Transistor. Package, LCC Surface Mount package.
2N2906AUB Applications, none identified.

Transistor 2N2906AUB Power Derating Guidelines

Use the Graph to determine how much to derate power [wattage] based on ambient operational temperature. Derating Curves for Transistor
Decreasing a devices operational limits as temperature is increased is called derating, in this case derating a devices operational power dissipation vs increasing ambient [surrounding] temperature.

Complete Details MIL-PRF-19500/291R; Semiconductor Device, Transistor, PNP, Silicon, Switching, Types 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA, 2N2907AUA, 2N2906AUB, 2N2906AUBC, 2N2907AUB, and 2N2907AUBC, JAN, JANTX, JANTXV, JANJ, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH JANHCB, JANHCD JANKCB, JANKCD JANKCBM, JANKCBD, JANKCBP, JANKCBL, JANKCBR, JANKCBF, JANKCBG, and JANKCBH, [UB Surface Mount package]

2N2906 AUB Maximum Ratings:
Collector Emitter Voltage [V_CE] = 60 dc volts
Collector Base Voltage [V_CB] = 60 dc volts
Emitter Base Voltage [V_EB] = 5 dc volts
Power Dissipation 25⁰C = 400mW
Operating Temperature = -65 to +200⁰C
Storage Temperature [T_STG]= -65 to +200⁰C

UB Package Graphic