2N2604 Temperature-Power Derating Curve [2N2605]
PNP Low Power Silicon Transistor. Package, TO-46 Metal Can.
Transistor Applications: Designed for high speed switching applications.
2N2604 Derating Curve, TO-46 Package
Use the Graph to determine how much to derate power [wattage] based on ambient operational temperature. Note that both the 2N2604 and 2N2605 need to be derated for any temperate above 250C, and have a maximum operational ambient temperature range to 2000C
Derate linearly 2.28 mW/0C above an ambient temperature of 250C.
The derating curve or equation relate to a component in still air, applying forced air will lessen the requirement to derate the device. How ever the best design will use the two lower gray curves for 2N2604 operation.
Additional Transistor Derating Curves
Temperature derating is a standard design practice for electrical engineers.
Refer to MIL-PRF-19500/354K Semiconductor Device, Transistor, PNP, Silicon, Low-Power, Types 2N2604, 2N2604UB, 2N2605, and 2N2605UB, JAN, JANTX, JANTXV, and JANS, JANHC, JANKC, [TO-46, UB surface mount package]
2N2604 Maximum Ratings:
Collector Emitter Voltage (VCEO) = 60 volts dc [2N2604 / 2N2605]
Collector Base Voltage (VCBO) = 80 volts dc [2N2604]
Collector Base Voltage (VCBO) = 70 volts dc [2N2605]
Emitter Base Voltage (VEBO) = 6 volts dc [2N2604 / 2N2605]
Power Dissipation (PT) at 250C = 400mW
Operating Temperature (TJ) = -65 to +2000C, [Max Junction Temperature; 2000C]
Storage Temperature (Tstg) = -65 to +2000C,
The 2N2605 will have a higher hfe than the 2N2604 at the same Ic.
Consult the data sheet for additional information.
List of Transistor Manufacturers, Clip-on Heat Sink Manufacturers
How to Derate; Guideline for Derating Electronic Components
UB Case Package 2N2604
