**2N1711** Temperature-Power Derating Curves

NPN Low Power Silicon Transistor. Package, TO-5 metal Can [Common Package TO-39].

**2N1711 Applications**; DC and wideband amplifiers. Oscillator and switching circuits.

**Temperature Derating Curve for 2N1711 Transistor**

The chart details the maximum allowable power dissipation with increasing ambient temperature. Maximum operational power dissipation is achievable at 25C. However above 25C the maximum package dissipation, or power, must be reduce to insure that the devices junction temperature remains constant. The higher the ambient temperature is increased the lower the allowable power dissipation, as depicted in the curves.

Rating for case temperature are a bit higher, although the curve details operation using air temperature. Using case temperature [not shown] the maximum dc operating rating is 3 watts. For case temperature the first curve starts at 2.8 watts and falls to 0 watts at 110 degrees centigrade. The second curve starts at 3 watts and falls to zero between 35C and 125C. These first two curves represent the preferred operating ranges.

Decreasing a devices operational limits as temperature is increased is called derating, in this case derating a devices operational power dissipation vs increasing ambient [surrounding] temperature [in still air].

**2N1711 Derating Notes:**

**1.** The Derating curve is the true inverse of the worst case thermal resistance value. All devices are capable of operating at TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired maximum TJ allowed.

**2.** The Blue derate design curve constrained by the maximum junction temperature (Tj 200C) and power rating specified.

**3.** The Black derate design curve is chosen at a Tj 150C, where the maximum temperature of the electrical tests are performed.

**4.** The Green and Olive-drab derate design curves are chosen at TJ 125C, and 110C to show the power rating where most users want to limit junction temperatures in their application.

Use the Graph to determine how much to derate power [wattage] based on ambient temperature.

The 2N1711 Transistor may also be derated by Semiconductor Case Temperature.

Related 2N1711 thermal data; 2N1711 Junction to Case Thermal Impedance.

Refer to **MIL-PRF-19500/225**; Semiconductor Device, Transistor, NPN, Silicon,
Types 2N1711, 2N1711S, 2N1890, and 2N1890S, JAN and JANTX, [TO-5 Package]

**2N1711 Maximum Ratings**: 25 degrees C

Collector Emitter Voltage = 75 volts dc [Vce]

Collector Base Voltage = 30 volts dc [Vcb]

Emitter Base Voltage = 7 volts dc [Veb]

Power Dissipation 25^{0}C = 800mW [see the curve]

Operating Temperature = -65 to +200^{0}C

**2N1711 Electrical Characteristics**

hfe minimum = 20 [VCE = 10 V dc, IC = 10 uA dc]

hfe maximum = 300 [VCE = 10 V dc, IC = 150 mA dc]

Vce sat = 1.5V [IC = 150 mA dc, IB = 15 mA dc]

Additional parameters, consult the manufacturers data sheet. 2N1711 DUT Circuit

The curve includes the 2N1890 BJT, but is not covered here.

This page, and graph covers the ambient air temperature surrounding a 2N1711 while the device is being operated.

Rating a device at either air temperature or case temperature result in the same thing.

The difference is the measurement point, or the object being measured.