2N1711 Temperature-Power Derating Curves
NPN Low Power Silicon Transistor. Package, TO-5 Metal Can [Common Package TO-39].
2N1711 Applications; DC and wideband amplifiers.
Temperature Derating Curve for 2N1711 Transistor
The chart details the maximum allowable power dissipation with increasing ambient temperature. Maximum operational power dissipation is achievable at 25C. However above 25C the maximum package dissipation, or power, must be reduce to insure that the devices junction temperature remains constant. The higher the ambient temperature is increased the lower the allowable power dissipation, as depicted in the curves.
Decreasing a devices operational limits as temperature is increased is called derating, in this case derating a devices operational power dissipation vs increasing ambient [surrounding] temperature [in still air].
Use the Graph to determine how much to derate power [wattage] based on ambient operational temperature. Transistor Derating Curves
Refer to MIL-PRF-19500/225J; Semiconductor Device, Transistor, NPN, Silicon, Types 2N1711, 2N1711S, 2N1890, and 2N1890S, JAN and JANTX, [TO-5]
2N1711 Maximum Ratings: 25 degrees C
Collector Emitter Voltage = 75 volts dc
Collector Base Voltage = 30 volts dc
Emitter Base Voltage = 7 volts dc
Power Dissipation 250C = 800mW
Operating Temperature = -65 to +2000C
Consult the manufacturers data sheet for additional parameters. 2N1711 DUT Circuit
TO-39 Metal Can Package
Terminal pin out; Lead 3; Collector, Lead 2; Base, Lead 1; Emitter
The TO-39 transistor package may also be called a TO205AD
