1N6392 Diode Temperature-Current Derating Curve [DO-5]
Fast Recovery Diode.
1N6392 Diode Applications; Switching Power supplies, converters, free-wheeling diodes, and reverse battery
protection.
1N6392 Temperature-Current Derating Curve
Use the current rating curve to determine maximum operational forward current based on case temperature. For temperatures above 500C the current must be reduce to maintain junction temperature.
Current derating is not required if the 1N6392 is operated at 'room' temperature. Adding forced air cooling will reduce the requirement for derating, the graph is for free-air [still-air].
As with any of these derating curves in this section the circuit should be designed to operate using one of the gray curves. However with this graph even the curve at 150 degrees may be used, but the curve intersecting 175 degrees represents the maximum junction temperature and should be avoided.
The DO-5 package is a case mount package, attaching the DO-5 to a metal frame will act as a heat sink reducing the derating requirement. Note that a DO-5 diode requires a wire to connect to terminal 1 and the circuit.
Refer to MIL-PRF-19500/554; Semiconductor Device, Diode, Silicon, Schottky Barrier, Fast Recovery, Type 1N6392, JAN quality, [DO-5 package]. Similar package style TO-203AB.
1N6392 Maximum Operation Ratings:
Maximum Repetitive Reverse Voltage = 45 volts [VRRM]
Average Forward Current = 60A [If]
Power Dissipation 250C = 500mW
Operating Temperature = -55 to +1750C
Maximum Capacitance = 3000pF [Ct]
DO-5 Package Dimensions
1N6392 Peak Reverse Energy Test Circuit
The circuit to the left is used to test the peak reverse energy of a 1N6392 diode.
However the same circuit could be used to test any diode.
The input pulse [Vg] is 10 volts DC, from a 50 ohm source.
The pulse width is 30uS [Tp] with a duty cycle of 1 percent.
The switch [S] allows pulse width adjustment while open.
When the switch is closed the 1N6392 is tested and current is measured via the current sense.
Temperature Derating Terms:
Case mount. A type of package which provides a method of readily attaching one surface of the
semiconductor device to a heat dissipater to achieve thermal management of the case temperature.
Case temperature. Case temperature is that temperature measured at a specified point on the case of a
semiconductor device.
Ambient temperature. Ambient temperature is the air temperature measured below a semiconductor device,
in an environment of substantially uniform temperature, cooled only by natural air convection [Free-Air], and not materially
affected by reflective and radiant surfaces.
Storage temperature. Storage temperature is a temperature at which the device may be stored without any
power being applied.
Temperature coefficient. The ratio of the change in a parameter to the change in temperature.
Thermal resistance. Thermal resistance is the temperature rise, per unit power dissipation, of a junction
above the temperature of a stated external reference point under conditions of thermal equilibrium.
