1N4150 Diode Temperature-Current Derating Curve [DO-35 Through-Hole Case, DO-213]
High Conductance Ultra Fast Diode.
1N4150 general applications; High speed switch and general purpose use in
computer and industrial applications.
Temperature-Current Derating Curve 1N4150 Diode
Use the Curves to determine how much to derate current based on operational Printed Circuit Broad Temperature [Tpcb]. Note that the graph provides DC Forward Current vs Printed Circuit Board [PCB] temperature. The graph is for still-air with no near-by heat generating components.
Some data sheets indicate to derate above 250C ambient air temperature, at 3.33mW/0C. In either case the best way to draw heat away from the 1N4150 is to provide large pads on the PCB, the larger the better. The larger the copper pad the lower the thermal impedance, as seen in this graph: Copper Thermal Resistance.
Guidelines for derating diodes, additional
Diode Derating Curves
Temperature derating is a common design practice for electrical engineers.
Refer to MIL-PRF-19500/231M; Semiconductor Device, Silicon, Switching, Types 1N4150-1, 1N4150UR-1, 1N4150UB, 1N4150UBCA, 1N4150UBCC, 1N4150UBD, and 1N3600, JAN, JANTX, and JANTXV, [DO-35, DO-7, DO-213AA]
1N4150 Maximum Operational Ratings:
Maximum Repetitive Reverse Voltage = 50 volts
Average Rectified Forward Current = 200 mA
Power Dissipation 250C = 500mW
Operating Temperature = -65 to +200 0C, [Storage Temperature -65 to +200 0C]
DO-35 Through Hole, Axial Mounting Style
