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Engineering Abbreviations
"A", "B", "C", "D", "E", "F", "G", "H", "I", "J", "K", "L", "M",
"N", "O", "P", "Q", "R", "S", "T", "U", "V", "W", "X", "Y", "Z"

Memory Module Definitions

Description of Memory Module Types
DDR: Double Data Rate [Data moves which each edge of the clock]
DDR2: Double Data Rate NOTE [On-Die-Termination, ODT, Architecture Changes]
DDR3: Double Data Rate, third generation
DDR-FCRAM: Double-Data-Rate, Fast-Cycle Random Access Memory [Different core memory arrangement then DDR RAM]
DIMM: Dual In-Line Memory Module. The front side PWB pins are not connected to the rear side pins, pins used for different functions.
DRAM: Dynamic Random Access Memory (Requires Refresh)
DRSL: Differential Rambus Signaling Levels
FB-DIMM: Fully-Buffered DIMM [utilizes JEDEC-standard DDR2 SDRAM]
GDDR: Graphics DDR I/II/III/IV; GDDR1, GDDR2, GDDR3, GDDR4, GDDR5 - 1.25GHz Clock for GDDR4
LPDDR2 Low Power DDR2 [Mobile memory]
LRDIMM Load-Reduced DIMM
MiniDIMM Small form factor (SFF) memory module
PSRAM pseudo-SRAM
QBM2 Quad Band Memory, DDR Compatible at increased speed
QDRII: Quad Data Rate [also called DDR2, DDRII, QDRSRAM, and QDR-2 SRAM]
RDIMM Registered DIMM
RIMM Rambus DIMM [RDRAM], In-stalled in pairs. 16-bit modules are 184-pin or 32-bit modules at 232-pins
SDR DRAM: Single Data Rate SDRAM
SIMM: Single In-Line Memory Module. Data width is 32 bits per memory stick, the front 72 pins and back 72 fingers on the card are connected together. While DIMM pins are not.
SODIMM: Small Outline Dual In-Line Memory Module [used in Laptops / Notebooks]
SOCDIMM: Small-Outline Clocked DIMM, ultra-narrow SODIMM form factor
SORDIMM: Small-Outline Registered DIMM, ultra-narrow SODIMM
SRAM: Static Memory; Faster than DRAM, but more expensive
UDIMM UnBuffered DIMM
ULP-DIMM Ultra Low Profile DIMM [small form factor DDR/DDR2 Server/Routers/Switch memory]
VLP-DIMM Very Low Profile DIMM [small form factor DDR/DDR2 Server/Routers/Switch memory]
VRAM Video RAM (Dual Ported)
XDR: Memory sticks using DRSL [also called XDIMM], Memory type from RAMbus
XDR2: Memory type from RAMbus
ZB-DDR: Zero-Buffer DDR

Definition of Memory Module Terms
CAS Latency: Column Access Strobe, is the relationship between Column Access Time and Clock Cycle Time.
CAS-2: wait 2 clock cycles after the Column Address before the data appears. CAS-3, wait 3 clock cycles.
ECC: Error Correcting Code, an additional 8 bits [to 64-bit data] of ECC for a total of 72-bits [72-bit wide data]
Bank The DRAMs on a module are organized into a number of Banks that can be accessed simultaneously.
Rank Defines a set of DRAM chips (on a module) comprising 8 byte wide (64 bits) data, or 9 bytes (72 bits) with ECC. All devices in a Rank are connected by a single Chip-Select. The actual memory size is not defined. Single-sided memory modules are always Single-Rank. Double-sided unbuffered DIMMs and SODIMMs are always Dual-Rank. Server DIMMs may have up to 4 ranks.
Dual Rank Defines 2 sets of DRAM chips (on a module) each comprised of 8 byte wide (64 bits) data, or 9 bytes (72 bits) with ECC. All devices in a Rank are connected by a single Chip-Select. The actual memory size is not defined. Normally a module will have one rank per PWB side.
Quad Rank Defines 4 sets of DRAM chips (on a module) each comprised of 8 byte wide (64 bits) data, or 9 bytes (72 bits) with ECC. All devices in a Rank are connected by a single Chip-Select. The actual memory size is not defined. Normally a module will have two ranks per PWB side.
Registered DIMM Buffers the Address and Clock signals on each DIMM to enhance the signal quality. RDIMM
SO: Small Outline (Memory Module), as in SO-DIMM
 
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