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Engineering Abbreviations
"A",
"B",
"C",
"D",
"E",
"F",
"G",
"H",
"I",
"J",
"K",
"L",
"M",
"N",
"O",
"P",
"Q",
"R",
"S",
"T",
"U",
"V",
"W",
"X",
"Y",
"Z"
Memory Module Definitions
Description of Memory Module Types |
DDR: |
Double Data Rate [Data moves which each edge of the clock] |
DDR2: |
Double Data Rate
NOTE [On-Die-Termination, ODT, Architecture Changes] |
DDR3: |
Double Data Rate, third generation |
DDR-FCRAM: |
Double-Data-Rate, Fast-Cycle Random Access Memory [Different core
memory arrangement then DDR RAM] |
DIMM: |
Dual In-Line Memory Module. The front side PWB pins
are not connected to the rear side pins, pins used for different
functions. |
DRAM: |
Dynamic Random Access Memory (Requires Refresh) |
DRSL: |
Differential Rambus Signaling Levels |
FB-DIMM: |
Fully-Buffered DIMM [utilizes JEDEC-standard DDR2 SDRAM] |
GDDR: |
Graphics DDR I/II/III/IV; GDDR1, GDDR2, GDDR3, GDDR4, GDDR5 -
1.25GHz Clock for GDDR4 |
LPDDR2 |
Low Power DDR2 [Mobile memory] |
LRDIMM |
Load-Reduced DIMM |
MiniDIMM |
Small form factor (SFF) memory module |
PSRAM |
pseudo-SRAM |
QBM2 |
Quad Band Memory, DDR Compatible at increased speed |
QDRII: |
Quad Data Rate [also called DDR2, DDRII, QDRSRAM, and QDR-2 SRAM] |
RDIMM |
Registered DIMM |
RIMM |
Rambus DIMM [RDRAM], In-stalled in pairs. 16-bit modules are 184-pin
or 32-bit modules at 232-pins |
SDR DRAM: |
Single Data Rate SDRAM |
SIMM: |
Single In-Line Memory Module. Data width is 32 bits
per memory stick, the front 72 pins and back 72 fingers on the card
are connected together. While DIMM pins are not. |
SODIMM: |
Small Outline Dual In-Line Memory Module [used in Laptops / Notebooks] |
SOCDIMM: |
Small-Outline Clocked DIMM, ultra-narrow SODIMM form factor |
SORDIMM: |
Small-Outline Registered DIMM, ultra-narrow SODIMM |
SRAM: |
Static Memory; Faster than DRAM, but more expensive |
UDIMM |
UnBuffered DIMM |
ULP-DIMM |
Ultra Low Profile DIMM [small form factor DDR/DDR2 Server/Routers/Switch memory] |
VLP-DIMM |
Very Low Profile DIMM [small form factor DDR/DDR2 Server/Routers/Switch memory] |
VRAM |
Video RAM (Dual Ported) |
XDR: |
Memory sticks using DRSL [also called XDIMM], Memory type from RAMbus |
XDR2: |
Memory type from RAMbus |
ZB-DDR: |
Zero-Buffer DDR |
Definition of Memory Module Terms |
CAS Latency: |
Column Access Strobe, is the relationship between
Column Access Time and Clock Cycle Time. |
CAS-2: |
wait 2 clock cycles after the Column Address before
the data appears. CAS-3, wait 3 clock cycles. |
ECC: |
Error Correcting Code, an additional 8 bits [to 64-bit
data] of ECC for a total of 72-bits [72-bit wide data] |
Bank |
The DRAMs on a module are organized into a number of
Banks that can be accessed simultaneously. |
Rank |
Defines a set of DRAM chips (on a module) comprising 8
byte wide (64 bits) data, or 9 bytes (72 bits) with ECC. All devices
in a Rank are connected by a single Chip-Select. The actual memory
size is not defined. Single-sided memory modules are always
Single-Rank. Double-sided unbuffered DIMMs and SODIMMs are always
Dual-Rank. Server DIMMs may have up to 4 ranks. |
Dual Rank |
Defines 2 sets of DRAM chips (on a module) each
comprised of 8 byte wide (64 bits) data, or 9 bytes (72 bits) with
ECC. All devices in a Rank are connected by a single Chip-Select. The
actual memory size is not defined. Normally a module will have one
rank per PWB side. |
Quad Rank |
Defines 4 sets of DRAM chips (on a module) each
comprised of 8 byte wide (64 bits) data, or 9 bytes (72 bits) with
ECC. All devices in a Rank are connected by a single Chip-Select. The
actual memory size is not defined. Normally a module will have two
ranks per PWB side. |
Registered DIMM |
Buffers the Address and Clock signals on each DIMM to
enhance the signal quality. RDIMM |
SO: |
Small Outline (Memory Module), as in SO-DIMM |