"A"
"B"
"C",
"D",
"E",
"F",
"G",
"H",
"I",
"J",
"K",
"L",
"M",
"N",
"O",
"P",
"Q",
"R",
"S",
"T",
"U",
"V",
"W",
"X",
"Y",
"Z"
ELECTROSTATIC DISCHARGE. ESD
Antistatic Property. the reduction of triboelectrlc
charge generation. Anti-static materials minimize the generation of static
charges. This property is not dependent upon material resistivity.
Catastrophic Failure. A failure resulting in the permanent loss of a
critical function.
Charged Device Model. [CDM] A model characterizing a particular ESD failure
mechanism in which an item isolated from ground is charged and is subsequently
discharged causing a short duration discharge pulse. One of three ESD models, refer to the chart below. The standard that defines CDM is; ESD STM5.3.1: Electrostatic Discharge Sensitivity Testing - Charged Device Model.
Classification of ESDS Parts.
ESD Class 1: Susceptible to damage from ESD voltages greater than O to
1,999 Volts.
ESD Class 2: Susceptible to damage from ESD voltages of 2,000 to 3,999
volts.
ESD Class 3: Susceptible to damage from ESD voltages of 4,000 to 15,999
volts.
ESD Class non-ESD Sensitive: Susceptible to damage from ESD voltages above 16,000 volts.
Note there are sub classifications, refer below right.
ESD MODEL
HBM; Human Body Model, HBM Definition
MM; Machine Model,
CDM; Charged Device Model
ESDS Models and Voltage Ranges
| Device Type | Junction/Polarity |
| Bipolar transistor (NPN) | E+ to B |
| Bipolar transistor (PNP) | E- to B+ |
| Junction FET's (N-channel) | G+ to S |
| Junction FET's (P-channel) | G- to S+ |
| MOSFET's (N- or P-channel) | G to S (both polarities) |
| Gate protected FET's (P-channel) | G to S (both polarities) |
| Rectifiers (hot carrier and schottky) | A- to K+ |
| Thyristors | G to K (both polarities) |
| Unijunctions | G to B1 (both polarities) |
| Darlingtons | E to B (both polarities) |
| Small signal diodes | A to K (both polarities) |
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Next section of ESD Terms 'El', or ESD Military Specifications
