2N6770T1 FET [TO-254AA package]. Hermetic MOSFET
2N6768T1 Applications:
2N6770T1 Maximum Drain Current vs Temperature
2N6770-T1 Maximum DC Ratings
Voltage Gate to Source = 20 volts dc
Voltage Drain to Source = 500 volts dc
Voltage Drain to Gate = 500 volts dc
Junction Temperature = -55 to +150oC
MIL-PRF-19500/543K; Semiconductor Device, Transistor, Field Effect, N-Channel, Silicon, Repetitive Avalanche Types 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, and 2N6770T1, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC [TO-254AA]
FET Derating Guidelines, Transistor Derating Recommendations
Related Field Effect Transistors: 2N6764 FET, 2N6764T1 FET
2N6766 FET,
2N6766T1,
, 2N6768
2N6768T1,
2N6770 FET
TO-254 Tab mount. A type of package which provides a method of readily attaching one surface [Tab] of the semiconductor device to a heat dissipater [Heat Sink] to achieve thermal management of the case temperature. All terminals are isolated from case in a TO-254 package. When securing the tab to a heat sink the body of the TO-254 may lift off the surface of the board, use epoxy to secure the body of the TO-254 to the circuit board.
Compensating for temperature rise; Electronic Component Derating
Lead identification: Terminal 1; Drain. Terminal 2; Source. Terminal 3; Gate.
MIL-PRF-19500; Performance Specification Sheet
