2N6766T1 FET [TO-254AA package]. Hermetic MOSFET
2N6766 Applications:
Maximum Drain Current vs Temperature
2N6766, 2N6766T1
Note that the 2N6766 only operates up to a case temperature [Tc] of 250C before the device needs to be derated. Or at 250C the maximum amount of drain current permitted is 30 amps. A maximum case temperature of 1500C is allowable.
This graph shows 2N6766 Drain Current [amperes] vs. Case Temperature, not ambient temperature [air temperature] that many other charts might provide.
2N6766 Maximum DC Ratings
Voltage Gate to Source = 20 volts dc [VGS]
Voltage Drain to Source = 100 volts dc [VDS]
Voltage Drain to Gate = 100 volts dc [VDG]
Junction Temperature = -55 to +150oC
MIL-PRF-19500/543K; Semiconductor Device, Transistor, Field Effect, N-Channel, Silicon, Repetitive Avalanche Types 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, and 2N6770T1, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC [TO-254AA]
FET Derating Guidelines, Transistor Derating Guidelines
TO-254 Tab mount. A type of package which provides a method of readily attaching one surface [Tab] of the semiconductor device to a heat dissipater [Heat Sink] to achieve thermal management of the case temperature. All terminals are isolated from the case in a TO-254 package.
Compensating for temperature rise; Electronic Component Derating
Lead identification: Terminal 1; Drain. Terminal 2; Source. Terminal 3; Gate.
MIL-PRF-19500; Performance Specification Sheet
