FET Designer Recommendations
2N6764 FET [TO-204AE package, Modified TO-3]. Hermetic MOSFET
IRF150: 100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
2N6764 Applications: switching power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
2N6764 Derating Curve
2N6764 Maximum Drain Current vs Temperature
Use a linear derating factor of 1.2 W/0C beginning at 250C as an approximation.
Use the chart to determine maximum drain current vs case temperature.
The Junction to Case Thermal Resistance is 0.830C/W for this package.
Don't allow the case temperature to exceed 150C as shown in the graph.
2N6764 Absolute Maximum Ratings
Voltage Gate to Source = 20 volts dc
Voltage Drain to Source = 100 volts dc
Voltage Drain to Gate = 100 volts dc
Drain Current = 38 amps dc, 250C
Pulsed Drain Current = 152 amps dc
Power Dissipation = 150 watts
Junction Temperature = -55 to +150oC
Storage Temperature = -55 to +150oC
MIL-PRF-19500/543; Semiconductor Device, Transistor, Field Effect, N-Channel, Silicon, Repetitive Avalanche Types 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1,
2N6770, and 2N6770T1 [TO-204AE; formerly designated as a TO-3]
The part is qalified to JAN, JANTX, JANTXV, JANS, JANHC, and JANKC screening levels.
As with other parts, the T1 designation usually means a alternate package type.
FET Derating Guidelines, Transistor Derating Guidelines
TO-204 Flange mount. [Diamond Base] A package shape which provides a method of readily attaching one surface of the semiconductor device to a heat dissipater [Heat Sink] to achieve thermal management of the case temperature. This semiconductor package has the Drain electrically connected to the case. Additional design data on the TO-204 Package.
For reference, see; Temperature Compensation in Electronic Components.
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