2N6760 FET [TO-204AA package]
IRF330; 400V Single N-Channel Hi-Rel MOSFET in a TO-204AA package
2N6760 Maximum Drain Current vs Temperature
Derate the Drain current of the 2N6760 as specified by the maximum case temperature in the chart above. Never allow the junction temperature to exceed 150C as indicated in the graph.
Note the required decrease in Drain current as the case temperature increases. To allow for maximum component life operate the 2N6760 well below the curve shown in the graph above. Apply force air cooling as required.
2N6760 Maximum Ratings
Voltage Gate to Source = 20 volts dc
Voltage Drain to Source = 400 volts dc
Voltage Drain to Gate = 400 volts dc
2N6760 Junction Temperature = -55 to +150oC
MIL-PRF-19500/542G; Semiconductor Device, Transistor, Field Effect, N-Channel, Silicon, Types 2N6756, 2N6758, 2N6760, 2N6762, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC [TO-204AA; formerly TO-3]
FET Derating Guidelines, Transistor Derating Guidelines
TO-204 Case mount. A type of package [TO-204] which provides a method of readily attaching one surface of the semiconductor device to a heat dissipater to achieve thermal management of the case temperature. The Drain of the 2N6760 is electrically connected to the case. Refer to the link for terminal identification.
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Compensating for case temperature rise; Electronic Component Derating
Electronic Key Words: FET, Component Derating, reliability, Sizing, Derate, Semiconductor, Military, Rated Temp, Temperature, Heating, Thermal, JAN, How To, Guideline, DC Operation, Rating, Design, Failure, MTBF.
