Derating curves to determine maximum drain current with different case temperatures.
General Recommendations; Transistor Derating Guidelines
FET 2N6756 Derating Curve, TO-204AA Case
FET 2N6758 Derating Curve, TO-204AA Case
FET 2N6760 Derating Curve, TO-204AA Case
FET 2N6762 Derating Curve, TO-204AA Case
FET 2N6764 Derating Curve, TO-204AE Case
... FET 2N6764T1 Derating Curve, TO-254AA Case
FET 2N6766 Derating Curve, TO-204AE Case
... FET 2N6766T1 Derating Curve, TO-254AA Case
FET 2N6768 Derating Curve, TO-204AE Case
... FET 2N6768T1 Derating Curve, TO-254AA Case
FET 2N6770 Derating Curve, TO-204AE Case
... FET 2N6770T1 Derating Curve, TO-254AA Case
2N7000 Derating guidelines for an N-Channel MOSFET. TO-92, SOT-23
FET Manufacturers, Field Effect Transistors
Use the figures in the graphs to determine how much to derate each parameter.
Not all device characteristics are provided, a vendor data sheet should be consulted.
Field Effect Transistor Derating Factor:
Derate Power by 50%
Derate current to 75%
Derate applied voltage to 75%
The derating factor is a recommendation or guideline, while the curves should be treated as a rule. As the curves insure that the junction temperature is not exceeded, while the derating factor insure higher reliability.
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Temperature derating is standard design practice for electrical engineers.
How to Derate Components; Guidelines for Derating Electronic Devices
Low Voltage Complementary Pairs
ZXMD63C03X; 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET, MSOP8
Linear Derating Factor 10 mW/°C
ZXMC3A18DN8; Complementary 30V enhancement mode MOSFET, SO8
Linear derating factor 17 mW/°C
DOD and MIL Specs
MIL-PRF-19500/757
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL,
RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS),
LOGIC-LEVEL SILICON, TYPES 2N7624U3 AND 2N7625T3,
JANTXVR, JANTXVF, JANSR, AND JANSF
Derate linearly by 0.60 mW/C (T3) for TC > +25C; by 0.45 mW/C (U3) for TC > +25C
MIL-PRF-19500/753
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
(TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL,
SILICON, TYPES 2N7580T1, 2N7582T1, 2N7584T1, AND 2N7586T1,
JANTXVR, JANTXVF, JANSR, AND JANSF [TO-254AA]
Derate linearly by 1.67 W/°C for TC > +25°C.
MIL-PRF-19500/751
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR,
P-CHANNEL, SILICON, TYPE 2N7508U3,
JANTX, JANTXV, AND JANS [TO-276AA]
Derate linearly 0.6 W/C for TC > +25C
MIL-PRF-19500/750
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR,
N-CHANNEL, SILICON, TYPE 2N7507U3,
JANTX, JANTXV, AND JANS [TO-276AA]
Derate linearly by 0.6 W/°C for TC > +25°C.
MIL-PRF-19500/749A
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL
RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS),
SILICON, TYPES 2N7506U8 AND 2N7506U8C,
JANTXVR, JANTXVF, JANSR AND JANSF [SMD]
Derate linearly by 0.185 W/C for TC > +25C.
MIL-PRF-19500/748
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR,
P-CHANNEL, SILICON, TYPE 2N7505T3,
JANTX, JANTXV AND JANS [TO-257AA (T3)]
Derate linearly by 0.6 W/°C for TC > +25°C
Electronic Key Words: FET, Component Derating, reliability, Sizing, Derate, Semiconductor, Ampacity, Fusing, Military, Rated Temp, Temperature, Heating, Thermal, JAN, How To, Guideline, DC Operation, Rating, Design, Failure, MTBF.
